Mechanisms of Andreev reflection in quantum Hall graphene

Abstract

We perform realistic simulations of a hybrid superconductor-graphene device in the quantum Hall regime to identify the origin of downstream resistance oscillations in a recent experiment Zhao et. al. Nature Physics 16, (2020). A comparison between the simulations and the experimental data suggests that disorder-induced intervalley scattering at the normal-superconductor (NS) interface can be the dominant cause of oscillations. We also show conductance oscillations due to additional edge states on clean interfaces with Fermi level mismatch. However, the regular pattern as a function of external parameters is not visible in the presence of disorder. Our work provides a way to qualitatively probe the quality of NS interfaces on multiterminal quantum Hall devices.